2db1188p/q/r document number: ds31144 rev. 7 - 2 1 of 7 www.diodes.com february 2013 ? diodes incorporated 2db1188p/q/ r 32v pnp medium power transistor in sot89 features ? bv ceo > -32v ? i c = -2a high continuous current ? low saturation voltage v ce(sat) < 800mv @ 2a ? complementary npn type: 2dd1766 ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot89 ? case material: molded plastic, "green" molding compound. ? ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte ti n plated leads, solderable per mil-std-202, method 208 ? weight: 0.052 grams (approximate) ordering information (note 4) part number marking reel size (inches) tape width (mm) quantity per reel 2DB1188P-13 p23p 13 12 2,500 2db1188q-13 p23q 13 12 2,500 2db1188q-13r p23q 13 12 4,000 2db1188r-13 p23r 13 12 2,500 notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen and antimony free,"green" and lead-free. 3. halogen and antimony free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm t otal br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html marking information p23x = product type marking code where p23p = 2db1188p p23q = 2db1188q p23r = 2db1188r = manufacturers? code marking yww = date code marking y = last digit of year (ex: 1 = 2011) ww = week code (01 ? 53) top view device symbol pin out ? top view sot89 c e b c e c b
2db1188p/q/r document number: ds31144 rev. 7 - 2 2 of 7 www.diodes.com february 2013 ? diodes incorporated 2db1188p/q/ r maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value unit collector-base voltage v cbo -40 v collector-emitter voltage v ceo -32 v emitter-base voltage v ebo -6 v continuous collector current i c -2 a peak pulse collector current i cm -3 a base current i b -500 ma thermal characteristics (@t a = +25c unless otherwise specified.) characteristic symbol value unit power dissipation (note 5) p d 1 w thermal resistance, junction to ambient (note 5) r ja 125 c/w thermal resistance, junction to leads (note 6) r jl 19 c/w operating and storage temperature range t j , t stg -55 to +150 c notes: 5. for a device surface mounted on 15mm x 15mm fr4 pcb with high coverage of single sided 1 oz copper, in still air cond itions; the device is measured when operating in a steady-state condition. 6. thermal resistance from junction to solder-point (on the exposed collector pad).
2db1188p/q/r document number: ds31144 rev. 7 - 2 3 of 7 www.diodes.com february 2013 ? diodes incorporated 2db1188p/q/ r thermal characteristics and derating information 0 500 1000 1500 2000 2500 0 1 2 3 0 500 1000 1500 2000 2500 40.0 60.0 80.0 100.0 120.0 140.0 100m 1 10 10m 100m 1 r th vs area p d vs area 15x15mm 1oz single pulse t amb =25c v ce(sat) limited 100s 1ms 10ms 100ms 1s dc safe operating area -i c collector current (a) -v ce collector-emitter voltage (v) 0 20406080100120140160 0.0 0.2 0.4 0.6 0.8 1.0 15x15mm 1oz derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 120 15x15mm 1oz t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 100 15x15mm 1oz single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w) 2oz copper 1oz copper t amb =25c copper area (sqmm) maximum power (w) 2oz copper 1oz copper t amb =25c copper area (sqmm) thermal resistance (c/w)
2db1188p/q/r document number: ds31144 rev. 7 - 2 4 of 7 www.diodes.com february 2013 ? diodes incorporated 2db1188p/q/ r electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7) collector-base breakdown voltage bv cbo -40 ? ? v i c = -100a, i e = 0 collector-emitter breakdown voltage bv ceo -32 ? ? v i c = -10ma, i b = 0 emitter-base breakdown voltage bv ebo -6 ? ? v i e = -100a, i c = 0 collector cutoff current i cbo ? ? -100 na v cb = -20v, i e = 0 emitter cutoff current i ebo ? ? -100 na v eb = - 5v, i c = 0 on characteristics (note 7) collector-emitter saturation voltage v ce ( sat ) ? -0.35 -0.8 v i c = -2a, i b = -0.2a dc current gain 2db1188p h fe 82 ? 180 ? v ce = -3v, i c = -0.5a 2db1188q 120 270 2db1188r 180 390 small signal characteristics current gain-bandwidth product f t ? 120 ? mhz v ce = -5v, i c = -0.1a, f = 30mhz output capacitance c obo ? 20 ? pf v cb = -10v, f = 1mhz notes: 7. measured under pulsed conditions. pulse width 300s. duty cycle 2%. 012 3 45 -v , collector emitter voltage (v) ce figure 1. typical collector current vs. collector-emitter voltage -i , c o lle c t o r c u r r e n t (a) c 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i = -2ma b i = -4ma b i = -6ma b i = -8ma b i = -10ma b 0.001 0.01 0.1 1 10 -i , collector current (a) c figure 2. typical dc current gain vs. collector current (2db1188q) h, d c c u r r en t g ain fe 0 50 100 150 200 250 300 350 t = -55c a t = 25c a t = 85c a t = 150c a v = -3v ce 0.0001 0.001 0.01 0.1 1 10 -i , collector current (a) c figure 3. typical collector-emitter saturation voltage vs. collector current -v , c o lle c t o r emi t t e r saturation voltage (v) ce(sat) 0 0.1 0.2 0.3 0.4 0.5 0.6 t = -55c a t = 25c a t = 85c a t = 150c a i/i = 10 cb 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0001 0.001 0.01 0.1 1 10 -i , collector current (a) c figure 4. typical base-emitter turn-on voltage vs. collector current -v , base emi t t e r t u r n- o n v o l t a g e (v) be(on) t = 85c a t = 150c a t = -55c a t = 25c a v = -3v ce
2db1188p/q/r document number: ds31144 rev. 7 - 2 5 of 7 www.diodes.com february 2013 ? diodes incorporated 2db1188p/q/ r 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0001 0.001 0.01 0.1 1 10 -i , collector current (a) c figure 5. typical base-emitter saturation voltage vs. collector current -v , base emi t t e r sa t u r a t i o n v o l t a g e(v) be(sat) t = -55c a t = 25c a t = 85c a t = 150c a i/i = 10 cb 0.01 0.1 1 10 100 v , reverse voltage (v) r figure 6. typical output capacitance characteristics c , o u t p u t c a p a c i t an c e (pf) obo 0 10 20 30 40 50 60 f = 1mhz 0 20 40 60 80 100 120 140 0 102030405060708090100 i , emitter current (ma) e figure 7. typical gain-bandwidth product vs. emitter current f, g ai n -ba n dwid t h p r o d u c t (m h z) t
2db1188p/q/r document number: ds31144 rev. 7 - 2 6 of 7 www.diodes.com february 2013 ? diodes incorporated 2db1188p/q/ r package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sot89 dim min max a 1.40 1.60 b 0.44 0.62 b1 0.35 0.54 c 0.35 0.44 d 4.40 4.60 d1 1.62 1.83 e 2.29 2.60 e 1.50 typ h 3.94 4.25 h1 2.63 2.93 l 0.89 1.20 all dimensions in mm dimensions value (in mm) x 0.900 x1 1.733 x2 0.416 y 1.300 y1 4.600 y2 1.475 y3 0.950 y4 1.125 c 1.500 e h d1 b1 b e c l a d 8 (4x) h 1 r 0 . 2 0 0 y1 x1 y2 y c x (3x) y3 y4 x2 (2x)
2db1188p/q/r document number: ds31144 rev. 7 - 2 7 of 7 www.diodes.com february 2013 ? diodes incorporated 2db1188p/q/ r important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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